用于超低功耗LSI的SOI三栅极纳米线mosfet

2012 IEEE International SOI Conference (SOI) Pub Date : 2012-12-01 DOI:10.1109/SOI.2012.6404396

M. Saitoh, K. Ota, C. Tanaka, K. Uchida, T. Numata

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引用次数: 2

摘要

我们用SMT证明了高离子和小σ vth 10nm-NW tr。三栅极NW结构具有小的HNW和薄BOX，通过Vsub提供高的Vth可调性。本文提出的SOI三栅极nwtr是未来超低功耗CMOS LSI的关键器件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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SOI tri-gate nanowire MOSFETs for ultra-low power LSI

We demonstrated high-I_on and small-σV_th 10nm-NW Tr. wth SMT. Tri-gate NW structures with small HNW and thin BOX offer high Vth tunability by Vsub. SOI tri-gate NW Tr. presented in this work is a key device in future ultralow-power CMOS LSI.

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2012 IEEE International SOI Conference (SOI)

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