一种适用于65nm CMOS技术的无电阻电流参考源,对工艺、电源电压和温度变化的灵敏度较低

Michal Lukaszewicz, T. Borejko, W. Pleskacz
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引用次数: 11

摘要

描述了一种无电阻电流参考源,例如用于快速通信接口。在温度补偿中加入了温度系数相反的电流(PTC和NTC)和体效应。级联结构被用来提高电源抑制比。参考电流源采用GLOBALFOUNDRIES 65nm技术设计。该电路在- 40°C至125°C的范围内实现55 ppm/°C的温度系数。参考电流对工艺参数变化的敏感性为±3%。100hz和10mhz时不带滤波电容的电源抑制比分别小于- 127 dB和- 103 dB。
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A resistorless current reference source for 65 nm CMOS technology with low sensitivity to process, supply voltage and temperature variations
A reistorless current reference source, e.g. for fast communication interfaces, has been described. Addition of currents with opposite temperature coefficient (PTC and NTC) and body effect have been used to temperature compensation. Cascode structures have been used to improve the power supply rejection ratio. The reference current source has been designed in a GLOBALFOUNDRIES 65 nm technology. The presented circuit achieves 55 ppm/°C temperature coefficient over range of −40 °C to 125 °C. Reference current susceptibility to process parameters variation is ±3 %. The power supply rejection ratio without any filtering capacitor at 100 Hz and 10 MHz is lower than −127 dB and −103 dB, respectively.
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