{"title":"IMOS晶体管性能极限的研究","authors":"Zhenhua Wang, R. Huang","doi":"10.1109/ICSICT.2008.4734466","DOIUrl":null,"url":null,"abstract":"The Impact Ionization MOS (IMOS) transistor is a kind of promising concept as a candidate of MOS transistor due to its abrupt switching. However, some key issues will limit IMOS transistors for practical applications. In this paper, detailed physical explanations for the non-saturation of IMOS output characteristics and the unanticipated low drive current are presented. A new method to enhance the drive current of IMOS devices is reported and briefly discussed as well.","PeriodicalId":436457,"journal":{"name":"2008 9th International Conference on Solid-State and Integrated-Circuit Technology","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Investigations on the performance limits of the IMOS transistor\",\"authors\":\"Zhenhua Wang, R. Huang\",\"doi\":\"10.1109/ICSICT.2008.4734466\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The Impact Ionization MOS (IMOS) transistor is a kind of promising concept as a candidate of MOS transistor due to its abrupt switching. However, some key issues will limit IMOS transistors for practical applications. In this paper, detailed physical explanations for the non-saturation of IMOS output characteristics and the unanticipated low drive current are presented. A new method to enhance the drive current of IMOS devices is reported and briefly discussed as well.\",\"PeriodicalId\":436457,\"journal\":{\"name\":\"2008 9th International Conference on Solid-State and Integrated-Circuit Technology\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 9th International Conference on Solid-State and Integrated-Circuit Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.2008.4734466\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 9th International Conference on Solid-State and Integrated-Circuit Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.2008.4734466","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Investigations on the performance limits of the IMOS transistor
The Impact Ionization MOS (IMOS) transistor is a kind of promising concept as a candidate of MOS transistor due to its abrupt switching. However, some key issues will limit IMOS transistors for practical applications. In this paper, detailed physical explanations for the non-saturation of IMOS output characteristics and the unanticipated low drive current are presented. A new method to enhance the drive current of IMOS devices is reported and briefly discussed as well.
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