Y. Takahashi, K. Yoshikawa, M. Soutome, T. Fujii, M. Ichijyou, Y. Seki
{"title":"2.5 kV-1000 A电源组IGBT(大功率平板封装RC-IGBT)","authors":"Y. Takahashi, K. Yoshikawa, M. Soutome, T. Fujii, M. Ichijyou, Y. Seki","doi":"10.1109/ISPSD.1996.509502","DOIUrl":null,"url":null,"abstract":"A 2.5 kV-1000 A Power Pack IGBT has been successfully developed. This Power Pack IGBT is specially designed for the high power and highly reliable industrial and traction use. Compared with conventional IGBT modules, this Power Pack IGBT is simple and compact for a 2.5 kV-1 kA class device because the assembled IGBT and PWD chips are able to shrink due to the low thermal impedance of both side cooling. The Power Pack IGBT shows the high blocking voltage of 2.5 kV, the maximum on-state voltage of 4.5 V at the collector current I/sub c/=1000 A, T/sub j/=125/spl deg/C, and the turn-off capability of over 5/spl times/I/sub c/.","PeriodicalId":377997,"journal":{"name":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","volume":"87 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"2.5 kV-1000 A power pack IGBT (high power flat-packaged RC-IGBT)\",\"authors\":\"Y. Takahashi, K. Yoshikawa, M. Soutome, T. Fujii, M. Ichijyou, Y. Seki\",\"doi\":\"10.1109/ISPSD.1996.509502\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 2.5 kV-1000 A Power Pack IGBT has been successfully developed. This Power Pack IGBT is specially designed for the high power and highly reliable industrial and traction use. Compared with conventional IGBT modules, this Power Pack IGBT is simple and compact for a 2.5 kV-1 kA class device because the assembled IGBT and PWD chips are able to shrink due to the low thermal impedance of both side cooling. The Power Pack IGBT shows the high blocking voltage of 2.5 kV, the maximum on-state voltage of 4.5 V at the collector current I/sub c/=1000 A, T/sub j/=125/spl deg/C, and the turn-off capability of over 5/spl times/I/sub c/.\",\"PeriodicalId\":377997,\"journal\":{\"name\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"volume\":\"87 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-05-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1996.509502\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1996.509502","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
2.5 kV-1000 A power pack IGBT (high power flat-packaged RC-IGBT)
A 2.5 kV-1000 A Power Pack IGBT has been successfully developed. This Power Pack IGBT is specially designed for the high power and highly reliable industrial and traction use. Compared with conventional IGBT modules, this Power Pack IGBT is simple and compact for a 2.5 kV-1 kA class device because the assembled IGBT and PWD chips are able to shrink due to the low thermal impedance of both side cooling. The Power Pack IGBT shows the high blocking voltage of 2.5 kV, the maximum on-state voltage of 4.5 V at the collector current I/sub c/=1000 A, T/sub j/=125/spl deg/C, and the turn-off capability of over 5/spl times/I/sub c/.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
