亚阈值偏置范围内超薄反转通道和埋道SOI mosfet的噪声特性

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI:10.1109/IMFEDK.2014.6867057

T. Ito, S. Sato, Y. Omura

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引用次数: 2

摘要

本文研究了反沟道SOI型nMOSFET和埋沟道SOI型pMOSFET的低频噪声问题。分析表明，反转通道受界面圈闭的影响较大，而界面圈闭对埋藏通道的影响较小。结果表明，这些方面在阈下偏置范围内是显著的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Characterization of noise behavior of ultrathin inversion-channel and buried-channel SOI MOSFETs in the subthreshold bias range

This paper considers aspects of low-frequency noise in the inversion-channel SOI nMOSFET and the buried-channel SOI pMOSFET. Analyses suggest that the inversion channel is strongly influenced by interface traps, which also weakly influence the buried-channel. It is demonstrated that such aspects are significant in the subthreshold bias range.

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2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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