W. Liu, W. Chang, J.Y. Chen, K. Yu, S. Feng, J. Yan
{"title":"高击穿、高线性Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As伪晶HEMT","authors":"W. Liu, W. Chang, J.Y. Chen, K. Yu, S. Feng, J. Yan","doi":"10.1109/COMMAD.1998.791688","DOIUrl":null,"url":null,"abstract":"High-breakdown and high-linearity Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As pseudomorphic HEMTs have been fabricated successfully and demonstrated. A extremely high gate-to-drain breakdown voltage of 40 V is obtained by using a wide-gap Ga/sub 0.51/In/sub 0.49/P Schottky contact layer. For a 1 /spl mu/m-gate length device, the transconductance and output current density at room temperature are 90 mS/mm and 646 mA/mm, respectively. The measured f/sub T/ and f/sub max/ are 12 and 28.4 GHz, respectively. Therefore, the studied device shows a promise for microwave power applications.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-breakdown and high-linearity Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As pseudomorphic HEMT\",\"authors\":\"W. Liu, W. Chang, J.Y. Chen, K. Yu, S. Feng, J. Yan\",\"doi\":\"10.1109/COMMAD.1998.791688\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High-breakdown and high-linearity Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As pseudomorphic HEMTs have been fabricated successfully and demonstrated. A extremely high gate-to-drain breakdown voltage of 40 V is obtained by using a wide-gap Ga/sub 0.51/In/sub 0.49/P Schottky contact layer. For a 1 /spl mu/m-gate length device, the transconductance and output current density at room temperature are 90 mS/mm and 646 mA/mm, respectively. The measured f/sub T/ and f/sub max/ are 12 and 28.4 GHz, respectively. Therefore, the studied device shows a promise for microwave power applications.\",\"PeriodicalId\":300064,\"journal\":{\"name\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-12-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.1998.791688\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791688","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-breakdown and high-linearity Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As pseudomorphic HEMT
High-breakdown and high-linearity Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As pseudomorphic HEMTs have been fabricated successfully and demonstrated. A extremely high gate-to-drain breakdown voltage of 40 V is obtained by using a wide-gap Ga/sub 0.51/In/sub 0.49/P Schottky contact layer. For a 1 /spl mu/m-gate length device, the transconductance and output current density at room temperature are 90 mS/mm and 646 mA/mm, respectively. The measured f/sub T/ and f/sub max/ are 12 and 28.4 GHz, respectively. Therefore, the studied device shows a promise for microwave power applications.
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