{"title":"全剖面层间介质CMP分析","authors":"Runzi Chang, C. Spanos","doi":"10.1109/ISSM.2001.962932","DOIUrl":null,"url":null,"abstract":"Chemical mechanical polishing (CMP) is currently being used in the fabrication of state-of-the-art integrated circuits, and has been identified as an enabling technology for the semiconductor industry in its drive toward gigabit chips and sub-130 nm feature sizes. We present the application of a library-based specular spectroscopic scatterometry method, which is capable of getting a clear view of the profile evolution due to the oxide CMP process. This level of analysis will be crucial in building a rigorous CMP model in the near future.","PeriodicalId":356225,"journal":{"name":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Full profile inter-layer dielectric CMP analysis\",\"authors\":\"Runzi Chang, C. Spanos\",\"doi\":\"10.1109/ISSM.2001.962932\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Chemical mechanical polishing (CMP) is currently being used in the fabrication of state-of-the-art integrated circuits, and has been identified as an enabling technology for the semiconductor industry in its drive toward gigabit chips and sub-130 nm feature sizes. We present the application of a library-based specular spectroscopic scatterometry method, which is capable of getting a clear view of the profile evolution due to the oxide CMP process. This level of analysis will be crucial in building a rigorous CMP model in the near future.\",\"PeriodicalId\":356225,\"journal\":{\"name\":\"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-10-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSM.2001.962932\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM.2001.962932","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Chemical mechanical polishing (CMP) is currently being used in the fabrication of state-of-the-art integrated circuits, and has been identified as an enabling technology for the semiconductor industry in its drive toward gigabit chips and sub-130 nm feature sizes. We present the application of a library-based specular spectroscopic scatterometry method, which is capable of getting a clear view of the profile evolution due to the oxide CMP process. This level of analysis will be crucial in building a rigorous CMP model in the near future.