有源轨钳位ESD网络中无掺杂通道finfet的研究

2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI:10.1109/RELPHY.2008.4558896

M. Khazhinsky, M. Chowdhury, D. Tekleab, L. Mathew, J. Miller

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引用次数: 5

摘要

在本文中，我们研究了最先进的无掺杂通道finfet和FinDiodes，重点是I/O和ESD适用性。利用电特性数据、3D TCAD和紧凑的模型，我们证明了finfet和findides在I/O和ESD保护电路应用中具有非常吸引人的高击穿电压和低断开的组合。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Study of undoped channel FinFETs in active rail clamp ESD networks

In this paper we investigate state-of-the-art undoped channel FinFETs and FinDiodes with an emphasis on I/O and ESD applicability. Utilizing electrical characterization data, 3D TCAD, and a compact model, we demonstrate that FinFETs and FinDiodes exhibit a very appealing combination of high breakdown voltage and low Ioff for I/O and ESD protection circuit applications.

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2008 IEEE International Reliability Physics Symposium

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