MOCVD在GaAs上生长自组织GaSb岛的尺寸和密度控制

Motlan, E. Goldys, K. Drozdowicz-Tomsia, T. Tansley
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摘要

我们研究了常压化学气相沉积在GaAs衬底上生长的超薄GaSb层的形貌。原子力显微镜被用作主要的表征工具。通过优化V/III比和生长温度,进行了高品质GaSb的生长试验。研究了金属有机前驱体在氢中的稀释率和脉冲生长时间作为控制生长速率的手段。使用的稀释率比用于标准散装生长的稀释率高出40倍,以实现更长时间和更好地控制岛生长。我们发现关键的控制参数是稀释率/沉积时间比和相同数量的产物。在孤岛厚度为5 nm时,可重复获得的最小尺寸约为100/spl倍/80 nm,密度可控制在1至10/spl倍/10/sup 13/ m/sup -2/之间。我们将这些发现与目前的自组织岛生长理论联系起来,并提到它们与电子和光电子应用的复合结构的相关性。
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Size and density control of MOCVD grown self-organised GaSb islands on GaAs
We examine the morphology of ultrathin GaSb layers grown by atmospheric pressure chemical vapour deposition on GaAs substrates. Atomic force microscopy is used as a primary characterisation tool. Growth experiments are carried out with V/III ratio and temperature optimised for growth of high quality GaSb. The effects of dilution rates of metalorganic precursors in hydrogen, and pulse growth durations are investigated as a means of controlling growth rate. Dilution rates used are up to forty times higher than those used for standard bulk growth, to enable longer and better controlled island growth. We have found the critical control parameters to be the dilution rate/deposition time ratio and the product of the same quantities. Minimum dimensions reproducibly obtained are about 100/spl times/80 nm at an island thickness of 5 nm, with densities controllable between 1 to 10/spl times/10/sup 13/ m/sup -2/. We relate these findings to the present theories of self-organised island growth and mention their relevance to composite structures for electronic and optoelectronic applications.
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