T. Tsuchizawa, H. Iriguchi, C. Takahashi, M. Shimada, S. Uchiyama, M. Oda
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ECR etching of /spl alpha/-Ta for x-ray mask absorber using chlorine and fluoride gas mixture
We investigated the effect of using fluoride gas in ECR etching of /spl alpha/-Ta and confirmed that the addition of CF4 to Cl2 reduces the pattern roughness and can fabricate x-ray masks with pattern sizes of less than 100 nm. The results of CD uniformity will also be reported.
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