65纳米节点多孔介质双大马士革模式问题:架构能带来解决方案吗?

Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695) Pub Date : 2003-06-02 DOI:10.1109/IITC.2003.1219723

M. Assous, J. Simon, L. Broussous, C. Bourlot, M. Fayolle, O. Louveau, A. Roman, E. Tabouret, H. Feldis, D. Louis, J. Torres

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引用次数: 7

摘要

为了避免多孔ULK介质使用带来的集成问题，开发了双硬掩膜、双大马士革结构。结果表明，具有充分定义的硬掩模的通孔优先策略可以改善图案条件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Porous dielectric dual damascene patterning issues for 65 nm node: can architecture bring a solution?

A dual hard mask, dual damascene architecture was developed to circumvent integration problems brought by porous ULK dielectric use. It was demonstrated that a via first strategy with adequately defined hard masks can improve patterning conditions.

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Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)

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