MOCVD制备GaSb和Al/sub x/Ga/sub 1-x/Sb层及其性能

A. H. Ramelan, K. Drozdowicz-Tomsia, T. Tansley
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引用次数: 0

摘要

本文研究了金属有机化学气相沉积在GaAs、GaSb和Ge衬底上的Al/sub x/Ga/sub 1-x/Sb (0.05/spl les/x/spl les/0.25)和Al/sub x/Ga/sub 1-x/Sb (0.05/spl les/x/spl les/0.25)的结构、电学和光学性质。GaSb生长的最佳生长窗口(温度540/spl℃,V/III=0.72)与GaSb层的最佳生长参数存在显著差异。需要较高的V/III比和较高的温度来保护AlGaSb的表面形态。在0.05/spl les/x/spl les/0.25的组成范围内,Al/sub x/Ga/sub 1-x/Sb均在580/spl°/C和800/spl°/C条件下生长,V/III比=3,具有优异的光滑形貌,高的光透射率和电学参数可与该类型的最佳材料相媲美。
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Growth and properties of GaSb and Al/sub x/Ga/sub 1-x/Sb layers by MOCVD
A study of structural, electrical and optical properties of GaSb and Al/sub x/Ga/sub 1-x/Sb (0.05/spl les/x/spl les/0.25) grown by metalorganic chemical vapour deposition on GaAs, GaSb and Ge substrates using TMAl, TMGa, and TMSb is reported. The optimum growth window established for GaSb growth (temperature 540/spl deg/C and V/III=0.72) is significantly different from optimal growth parameters for AlGaSb layers. Higher V/III ratios and higher temperatures are required to protect the surface morphology of AlGaSb. All Al/sub x/Ga/sub 1-x/Sb in the investigated composition range 0.05/spl les/x/spl les/0.25 were grown at 580/spl deg/C and 800/spl deg/C and V/III ratio=3 and are characterized by excellent, smooth morphology, very high optical transmission and electrical parameters comparable with the best reported for this type of layer.
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