结合两种电学表征方法可靠地提取金属闸门功函数

ESSDERC 2007 - 37th European Solid State Device Research Conference Pub Date : 2007-09-01 DOI:10.1109/ESSDERC.2007.4430931

M. Charbonnier, J. Mitard, C. Leroux, G. Ghibaudo, V. Cosnier, P. Besson, F. Martin, G. Reimbold

{"title":"结合两种电学表征方法可靠地提取金属闸门功函数","authors":"M. Charbonnier, J. Mitard, C. Leroux, G. Ghibaudo, V. Cosnier, P. Besson, F. Martin, G. Reimbold","doi":"10.1109/ESSDERC.2007.4430931","DOIUrl":null,"url":null,"abstract":"In this paper, we extract the gate work function of metal/High-K stacks (WFM) with an internal photoemission (IPE) based method and a C(V) characterization method. We attempt to apply both of them on the same specially designed samples. We show that it leads to a better reliability of WFM and highlights new phenomena.","PeriodicalId":103959,"journal":{"name":"ESSDERC 2007 - 37th European Solid State Device Research Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Reliable extraction of metal gate work function by combining two electrical characterization methods\",\"authors\":\"M. Charbonnier, J. Mitard, C. Leroux, G. Ghibaudo, V. Cosnier, P. Besson, F. Martin, G. Reimbold\",\"doi\":\"10.1109/ESSDERC.2007.4430931\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we extract the gate work function of metal/High-K stacks (WFM) with an internal photoemission (IPE) based method and a C(V) characterization method. We attempt to apply both of them on the same specially designed samples. We show that it leads to a better reliability of WFM and highlights new phenomena.\",\"PeriodicalId\":103959,\"journal\":{\"name\":\"ESSDERC 2007 - 37th European Solid State Device Research Conference\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSDERC 2007 - 37th European Solid State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2007.4430931\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSDERC 2007 - 37th European Solid State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2007.4430931","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

本文采用基于内部光电发射(IPE)的方法和C(V)表征方法提取了金属/高k堆叠(WFM)的栅极功函数。我们试图将这两种方法应用于同一种特殊设计的样品上。结果表明，该方法提高了WFM的可靠性，并突出了新的现象。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Reliable extraction of metal gate work function by combining two electrical characterization methods

In this paper, we extract the gate work function of metal/High-K stacks (WFM) with an internal photoemission (IPE) based method and a C(V) characterization method. We attempt to apply both of them on the same specially designed samples. We show that it leads to a better reliability of WFM and highlights new phenomena.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

ESSDERC 2007 - 37th European Solid State Device Research Conference

自引率

0.00%

发文量

期刊最新文献

1T-capacitorless bulk memory: Scalability and signal impact Anisotropy of electron mobility in arbitrarily oriented FinFETs Self-aligned μTrench phase-change memory cell architecture for 90nm technology and beyond Critique of high-frequency performance of carbon nanotube FETs Analytical and compact modelling of the I-MOS (impact ionization MOS)