具有生产价值的等离子体掺杂(PD)方法

2008 9th International Conference on Solid-State and Integrated-Circuit Technology Pub Date : 2008-12-30 DOI:10.1109/ICSICT.2008.4734785

B. Mizuno, Y. Sasaki, C. Jin, K. Okashita, K. Nakamoto, T. Kitaoka, K. Tsutsui, H. Sauddin, H. Iwai

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引用次数: 0

摘要

通过将平面晶体管小型化并将其转化为三维结构，半导体已经成功地生产出来。这一创新将实现电子器件的理想性能。在这篇文章中，等离子体掺杂与He等离子体非晶化(He- pa)和几种最先进的快速热处理相结合，被证明是一种能够制造小型化2D器件和先进3D结构的技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Production-worthy approach of plasma doping (PD)

Semiconductors have been successfully produced by the miniaturization of planar transistors and their transformation into a 3D structure. This innovation will realize ideal performance in electric devices. In this article, plasma doping combined with He plasma amorphization (He-PA) and several state-of-the-art rapid thermal processing is shown to be a technology for enabling the fabrication of miniaturized 2D devices and advanced 3D structures.

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2008 9th International Conference on Solid-State and Integrated-Circuit Technology

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