L. Le Gratiet, E. Bedel, R. Grac, C. Fontaine, M. Pugnet
{"title":"范德华键合GaAlAs-GaAs MQW的亚纳秒光学偏转:载流子寿命和电场的影响","authors":"L. Le Gratiet, E. Bedel, R. Grac, C. Fontaine, M. Pugnet","doi":"10.1109/SIM.1996.571112","DOIUrl":null,"url":null,"abstract":"In this communication, we present preliminary results obtained on subnanosecond multiple quantum well modulators, as a step towards designing transmission deflectors. Fabrication of ultrafast transmission modulators based on GaAs/GaAlAs multiple quantum wells has been achieved by means of epitaxial lift-off. Transient grating experiments performed at high excitation energies showed diffraction efficiencies larger than 1%. The effect of a static electric field was investigated. Electric field screening has been evidenced in the picosecond regime at a pulse energy of 20 /spl mu/J/ cm/sup 2/.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Subnanosecond optical deflection in Van der Waals bonded GaAlAs-GaAs MQW: effects of carrier lifetime and electric field\",\"authors\":\"L. Le Gratiet, E. Bedel, R. Grac, C. Fontaine, M. Pugnet\",\"doi\":\"10.1109/SIM.1996.571112\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this communication, we present preliminary results obtained on subnanosecond multiple quantum well modulators, as a step towards designing transmission deflectors. Fabrication of ultrafast transmission modulators based on GaAs/GaAlAs multiple quantum wells has been achieved by means of epitaxial lift-off. Transient grating experiments performed at high excitation energies showed diffraction efficiencies larger than 1%. The effect of a static electric field was investigated. Electric field screening has been evidenced in the picosecond regime at a pulse energy of 20 /spl mu/J/ cm/sup 2/.\",\"PeriodicalId\":391894,\"journal\":{\"name\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1996.571112\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1996.571112","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Subnanosecond optical deflection in Van der Waals bonded GaAlAs-GaAs MQW: effects of carrier lifetime and electric field
In this communication, we present preliminary results obtained on subnanosecond multiple quantum well modulators, as a step towards designing transmission deflectors. Fabrication of ultrafast transmission modulators based on GaAs/GaAlAs multiple quantum wells has been achieved by means of epitaxial lift-off. Transient grating experiments performed at high excitation energies showed diffraction efficiencies larger than 1%. The effect of a static electric field was investigated. Electric field screening has been evidenced in the picosecond regime at a pulse energy of 20 /spl mu/J/ cm/sup 2/.
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