{"title":"全耗尽浮体亚微米SOI mosfet中BJT锁存的分析与控制","authors":"J. Choi, J. Fossum","doi":"10.1109/SOSSOI.1990.145689","DOIUrl":null,"url":null,"abstract":"The floating-body bipolar junction transistor (BJT) effects in fully depleted 0.5- mu m n-channel SOI (silicon on insulator) MOSFETs are analyzed, based on two-dimensional device simulations and on device measurements. PISCES simulations of the BJT-induced breakdown and latch phenomena are done, and parametric dependences are examined to give physical insight for optimal design. The analysis further relates the DC-breakdown and latch mechanisms in the fully depleted SOI MOSFET to the actual BJT-induced problems in an operating SOI CMOS circuit. A comprehensive understanding of floating-body effects is attained.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Analysis and control of BJT latch in fully depleted floating-body submicron SOI MOSFETs\",\"authors\":\"J. Choi, J. Fossum\",\"doi\":\"10.1109/SOSSOI.1990.145689\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The floating-body bipolar junction transistor (BJT) effects in fully depleted 0.5- mu m n-channel SOI (silicon on insulator) MOSFETs are analyzed, based on two-dimensional device simulations and on device measurements. PISCES simulations of the BJT-induced breakdown and latch phenomena are done, and parametric dependences are examined to give physical insight for optimal design. The analysis further relates the DC-breakdown and latch mechanisms in the fully depleted SOI MOSFET to the actual BJT-induced problems in an operating SOI CMOS circuit. A comprehensive understanding of floating-body effects is attained.<<ETX>>\",\"PeriodicalId\":344373,\"journal\":{\"name\":\"1990 IEEE SOS/SOI Technology Conference. Proceedings\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1990 IEEE SOS/SOI Technology Conference. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOSSOI.1990.145689\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1990 IEEE SOS/SOI Technology Conference. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOSSOI.1990.145689","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
摘要
基于二维器件仿真和器件测量，分析了浮体双极结晶体管(BJT)在满耗尽0.5 μ m n沟道SOI(绝缘体上硅)mosfet中的效应。对bjt引起的击穿和锁存现象进行了双鱼座模拟，并检查了参数依赖性，以便为优化设计提供物理见解。分析进一步将完全耗尽SOI MOSFET中的直流击穿和锁存机制与工作SOI CMOS电路中实际的bjt引起的问题联系起来。获得了对浮体效应的全面理解。
Analysis and control of BJT latch in fully depleted floating-body submicron SOI MOSFETs
The floating-body bipolar junction transistor (BJT) effects in fully depleted 0.5- mu m n-channel SOI (silicon on insulator) MOSFETs are analyzed, based on two-dimensional device simulations and on device measurements. PISCES simulations of the BJT-induced breakdown and latch phenomena are done, and parametric dependences are examined to give physical insight for optimal design. The analysis further relates the DC-breakdown and latch mechanisms in the fully depleted SOI MOSFET to the actual BJT-induced problems in an operating SOI CMOS circuit. A comprehensive understanding of floating-body effects is attained.<>
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