{"title":"利用激光退火技术制备超薄应变硅绝缘体衬底","authors":"Y. Mishima, A. Mimura, M. Fukuda, H. Ochimizu","doi":"10.1109/SOI.2005.1563567","DOIUrl":null,"url":null,"abstract":"We describe a low-temperature process for fabricating strained silicon on insulator (SOI) substrates using excimer laser annealing technology. We used an excimer laser to relax the SiGe layer on the SOI substrate. We can fabricate ultra-thin strained SOI by removing the relaxed SiGe layer on the SOI after laser annealing. Strains are investigated using ultraviolet (UV)-Raman spectroscopy and transmission electron microscopy (TEM).","PeriodicalId":116606,"journal":{"name":"2005 IEEE International SOI Conference Proceedings","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ultra-thin strained Si on insulator substrate using laser annealing\",\"authors\":\"Y. Mishima, A. Mimura, M. Fukuda, H. Ochimizu\",\"doi\":\"10.1109/SOI.2005.1563567\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We describe a low-temperature process for fabricating strained silicon on insulator (SOI) substrates using excimer laser annealing technology. We used an excimer laser to relax the SiGe layer on the SOI substrate. We can fabricate ultra-thin strained SOI by removing the relaxed SiGe layer on the SOI after laser annealing. Strains are investigated using ultraviolet (UV)-Raman spectroscopy and transmission electron microscopy (TEM).\",\"PeriodicalId\":116606,\"journal\":{\"name\":\"2005 IEEE International SOI Conference Proceedings\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 IEEE International SOI Conference Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.2005.1563567\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2005.1563567","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ultra-thin strained Si on insulator substrate using laser annealing
We describe a low-temperature process for fabricating strained silicon on insulator (SOI) substrates using excimer laser annealing technology. We used an excimer laser to relax the SiGe layer on the SOI substrate. We can fabricate ultra-thin strained SOI by removing the relaxed SiGe layer on the SOI after laser annealing. Strains are investigated using ultraviolet (UV)-Raman spectroscopy and transmission electron microscopy (TEM).
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