基于修正热阻矩阵的多led模组结温预测

Fanny Zhao, Brian Shieh, Fangyun Zeng, Guoming Yang, S. R. Ricky Lee
{"title":"基于修正热阻矩阵的多led模组结温预测","authors":"Fanny Zhao, Brian Shieh, Fangyun Zeng, Guoming Yang, S. R. Ricky Lee","doi":"10.1109/SSLChinaIFWS49075.2019.9019796","DOIUrl":null,"url":null,"abstract":"The junction temperature of LEDs is important for its life, reliability and efficacy. The existing transient measurement method of the junction temperature of using transient thermal tester (T3ster) based on the time-resolved measuring with a constant bias current according to the JESD51-14 is able to obtain the LED junction temperature rise based on the known temperature of thermostat module as the heatsink. In practice, without T3ster and the thermostat module, for multi-LED module with multiple heat sources in the luminaries, the thermal resistance matrix needs to be built to realize the thermal transfer between one another such that their junctions temperature raises can be calculated from their thermal power consumption. It is demonstrated that without measurement of the temperature heatsink temperature, the individual junction temperature of LEDs (groups) in multi-LED module with a thermistor (NTC or PTC) on its PCB measuring the local reference temperature can be obtained from the modified N x (N+1) thermal resistance matrix having N LED heat sources and N+1 junction temperature rise. A multi-LED module sample with 3 groups of LEDs has been studied at 5 different ambient temperatures and 2 additional different power combinations using 3 thermal resistance matrices built at 3 different ambient temperatures for comparison. The result showed that the modified method is effective and convenient for measurement of the junction temperature of the multi-LED modules with a similar accuracy comparing to the conventional one in the local reference temperature range of 20~100°C.","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"168 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Junction Temperature Prediction of the Multi-LED Module with the Modified Thermal Resistance Matrix\",\"authors\":\"Fanny Zhao, Brian Shieh, Fangyun Zeng, Guoming Yang, S. R. Ricky Lee\",\"doi\":\"10.1109/SSLChinaIFWS49075.2019.9019796\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The junction temperature of LEDs is important for its life, reliability and efficacy. The existing transient measurement method of the junction temperature of using transient thermal tester (T3ster) based on the time-resolved measuring with a constant bias current according to the JESD51-14 is able to obtain the LED junction temperature rise based on the known temperature of thermostat module as the heatsink. In practice, without T3ster and the thermostat module, for multi-LED module with multiple heat sources in the luminaries, the thermal resistance matrix needs to be built to realize the thermal transfer between one another such that their junctions temperature raises can be calculated from their thermal power consumption. It is demonstrated that without measurement of the temperature heatsink temperature, the individual junction temperature of LEDs (groups) in multi-LED module with a thermistor (NTC or PTC) on its PCB measuring the local reference temperature can be obtained from the modified N x (N+1) thermal resistance matrix having N LED heat sources and N+1 junction temperature rise. A multi-LED module sample with 3 groups of LEDs has been studied at 5 different ambient temperatures and 2 additional different power combinations using 3 thermal resistance matrices built at 3 different ambient temperatures for comparison. The result showed that the modified method is effective and convenient for measurement of the junction temperature of the multi-LED modules with a similar accuracy comparing to the conventional one in the local reference temperature range of 20~100°C.\",\"PeriodicalId\":315846,\"journal\":{\"name\":\"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)\",\"volume\":\"168 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019796\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019796","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

led的结温对其寿命、可靠性和效率有着重要的影响。现有的利用瞬态热测试仪(T3ster)基于JESD51-14的恒偏置电流时间分辨测量的结温瞬态测量方法,能够根据已知的恒温模块作为散热器的温度,获得LED结温升。在实际应用中,在没有T3ster和恒温模块的情况下,对于灯具中有多个热源的多led模块,需要建立热阻矩阵来实现彼此之间的热传递,从而通过其热功耗计算其结温升。结果表明,在不测量温度散热器温度的情况下,在PCB上带有热敏电阻(NTC或PTC)测量局部参考温度的多LED模块中,LED(组)的单个结温可以从具有N个LED热源和N+1个结温升的修正N x (N+1)热阻矩阵中获得。在5种不同的环境温度和2种不同的功率组合下,使用3种不同环境温度下的3种热阻矩阵进行比较,研究了3组led的多led模块样本。结果表明,在20~100℃的局部参考温度范围内,改进后的方法可以有效方便地测量多led模块的结温,精度与传统方法相近。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Junction Temperature Prediction of the Multi-LED Module with the Modified Thermal Resistance Matrix
The junction temperature of LEDs is important for its life, reliability and efficacy. The existing transient measurement method of the junction temperature of using transient thermal tester (T3ster) based on the time-resolved measuring with a constant bias current according to the JESD51-14 is able to obtain the LED junction temperature rise based on the known temperature of thermostat module as the heatsink. In practice, without T3ster and the thermostat module, for multi-LED module with multiple heat sources in the luminaries, the thermal resistance matrix needs to be built to realize the thermal transfer between one another such that their junctions temperature raises can be calculated from their thermal power consumption. It is demonstrated that without measurement of the temperature heatsink temperature, the individual junction temperature of LEDs (groups) in multi-LED module with a thermistor (NTC or PTC) on its PCB measuring the local reference temperature can be obtained from the modified N x (N+1) thermal resistance matrix having N LED heat sources and N+1 junction temperature rise. A multi-LED module sample with 3 groups of LEDs has been studied at 5 different ambient temperatures and 2 additional different power combinations using 3 thermal resistance matrices built at 3 different ambient temperatures for comparison. The result showed that the modified method is effective and convenient for measurement of the junction temperature of the multi-LED modules with a similar accuracy comparing to the conventional one in the local reference temperature range of 20~100°C.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Study on high power density light-emting diodes light source Smart Lighting with Autonomous Color Tunability Study on Preparation and Application of Nano-copper Powder for Power Semiconductor Device Packaging Effect of Mechanical Stress on the Electrical Characteristics of Different Type IGBT Chips Design and Characteristics of an Etching Field Limiting Ring for 10kV SiC Power Device
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1