{"title":"新型双向多指可控硅ESD保护器件的金属布线技术分析","authors":"Du Xiaoyang, Dong Yan, J. Liou","doi":"10.1109/ICSICT.2008.4734540","DOIUrl":null,"url":null,"abstract":"A novel dual direction SCR (DDSCR) ESD protection device is implemented in HJTK 0.18-¿m CMOS process without deep N-well or T-well masks. Both parallel and anti-parallel metal routing method of multi-fingered DDSCR is investigated in this paper. It shows that metal routing in layout design plays an important role in the performance of multi-fingered DDSCR due to its symmetrical TLP I-V plot characteristics.","PeriodicalId":436457,"journal":{"name":"2008 9th International Conference on Solid-State and Integrated-Circuit Technology","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Analysis of metal routing technique in a novel dual direction multi-finger SCR ESD protection device\",\"authors\":\"Du Xiaoyang, Dong Yan, J. Liou\",\"doi\":\"10.1109/ICSICT.2008.4734540\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel dual direction SCR (DDSCR) ESD protection device is implemented in HJTK 0.18-¿m CMOS process without deep N-well or T-well masks. Both parallel and anti-parallel metal routing method of multi-fingered DDSCR is investigated in this paper. It shows that metal routing in layout design plays an important role in the performance of multi-fingered DDSCR due to its symmetrical TLP I-V plot characteristics.\",\"PeriodicalId\":436457,\"journal\":{\"name\":\"2008 9th International Conference on Solid-State and Integrated-Circuit Technology\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 9th International Conference on Solid-State and Integrated-Circuit Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.2008.4734540\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 9th International Conference on Solid-State and Integrated-Circuit Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.2008.4734540","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analysis of metal routing technique in a novel dual direction multi-finger SCR ESD protection device
A novel dual direction SCR (DDSCR) ESD protection device is implemented in HJTK 0.18-¿m CMOS process without deep N-well or T-well masks. Both parallel and anti-parallel metal routing method of multi-fingered DDSCR is investigated in this paper. It shows that metal routing in layout design plays an important role in the performance of multi-fingered DDSCR due to its symmetrical TLP I-V plot characteristics.
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