$f_{\text{T}}$ SiGe:C HBT在55nm CMOS节点上植入集电极

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI:10.1109/BCICTS.2018.8551057

A. Gauthier, J. Borrel, P. Chevalier, G. Avenier, A. Montagne, M. Juhel, R. Duru, L. Clément, C. Borowiak, M. Buczko, C. Gaquière

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引用次数: 8

摘要

本文研究了一种具有植入集电极和DPSA-SEG发射基结构的Si/SiGe HBT的优化设计。研究了砷和磷的掺杂种类。一方面对硅缺陷和掺杂物的分布控制进行了评价，另一方面给出了hf的性能。碳磷共植入也进行了研究，并通过器件布局研究展示了兼容55纳米mosfet的最先进的450 GHz $f_{\text{T}}$ HBT。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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450 GHz $f_{\text{T}}$ SiGe:C HBT Featuring an Implanted Collector in a 55-nm CMOS Node

This paper deals with the optimization of a Si/SiGe HBT featuring an implanted collector and a DPSA-SEG emitter-base architecture. Arsenic and phosphorous doping species are studied. On the one hand, both silicon defects and dopants profiles control are evaluated and on the other hand, hf performances are presented. Carbon-phosphorous co-implantation is also investigated and a state-of-the-art 450 GHz $f_{\text{T}}$ HBT compatible with 55-nm MOSFETs is demonstrated through a device layout study.

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2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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