混合SOI/III-V光器件的模式工程

2012 IEEE International SOI Conference (SOI) Pub Date : 2012-10-01 DOI:10.1109/SOI.2012.6404399

S. Spector, R. Swint, C. Chen, J. Plant, T. Lyszczarz, P. Juodawlkis

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引用次数: 0

摘要

通过直接将III-V增益层连接到SOI波导(包括2-D和3-D绝热锥)来演示光学放大器。3-D锥形管的每模转换损耗低至0.1 dB，这是SOI波导之间的最低耦合。二维锥体用于控制与III-V增益区域的相互作用。集成放大器使用新的绝热锥形波导提供14 dB芯片内增益。

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Mode engineering for hybrid SOI/III-V optical devices

Optical amplifiers are demonstrated by direct bonding III-V gain layers to SOI waveguides which include 2-D and 3-D adiabatic tapers. The 3-D tapers have a low loss of 0.1 dB per mode conversion, the lowest demonstrated for coupling between SOI waveguides of this type. The 2-D tapers are used to control interaction with the III-V gain region. An integrated amplifier delivered 14 dB intra chip gain using the new adiabatic tapered waveguides.

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2012 IEEE International SOI Conference (SOI)

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