磁泡可靠性试验。部件和系统级方面

J. Davies
{"title":"磁泡可靠性试验。部件和系统级方面","authors":"J. Davies","doi":"10.1109/IRPS.1980.362918","DOIUrl":null,"url":null,"abstract":"Magnetic bubble memory components are extremely attractive for applications requiring high density, non-volatility and solid state reliability. Operating lifetest and accelerated stress test results are presented to classify the component error rates. Built-in error correction at the system level can improve error rates by several orders of magnitude. Calculated and measured error correction data are presented.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Magnetic Bubble Reliability Testing - Component and System Level Aspects\",\"authors\":\"J. Davies\",\"doi\":\"10.1109/IRPS.1980.362918\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Magnetic bubble memory components are extremely attractive for applications requiring high density, non-volatility and solid state reliability. Operating lifetest and accelerated stress test results are presented to classify the component error rates. Built-in error correction at the system level can improve error rates by several orders of magnitude. Calculated and measured error correction data are presented.\",\"PeriodicalId\":270567,\"journal\":{\"name\":\"18th International Reliability Physics Symposium\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1980-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"18th International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1980.362918\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"18th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1980.362918","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

磁泡存储组件对于需要高密度、非易失性和固态可靠性的应用非常有吸引力。给出了工作寿命试验和加速应力试验结果,对元件误差率进行了分类。系统级的内置纠错可以将错误率提高几个数量级。给出了计算和测量误差修正数据。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Magnetic Bubble Reliability Testing - Component and System Level Aspects
Magnetic bubble memory components are extremely attractive for applications requiring high density, non-volatility and solid state reliability. Operating lifetest and accelerated stress test results are presented to classify the component error rates. Built-in error correction at the system level can improve error rates by several orders of magnitude. Calculated and measured error correction data are presented.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Electromigration Resistance of Fine-Line Al for VLSI Applications Effects of Silicon Nitride Encapsulation on MOS Device Stability Reliability Analysis of Several Conductors at High Current Densities for use in Bubble Memories Reliability Testing and Evaluation of Magnetic Bubble Memories for Electronic Switching Systems Electromigration Failure in Hieavily Doped Polycrystalline Silicon
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1