欧洲纳米电子学路线图:鉴定和传播

E. Sangiorgi
{"title":"欧洲纳米电子学路线图:鉴定和传播","authors":"E. Sangiorgi","doi":"10.23919/IWJT.2019.8802903","DOIUrl":null,"url":null,"abstract":"The NEREID project (“NanoElectronics Roadmap for Europe: Identification and Dissemination”) is dedicated to map the future of European Nanoelectronics. NEREID’s objective is to develop a medium- and long-term roadmap for the European nanoelectronics industry, starting from the needs of applications to address societal challenges and leveraging the strengths of the European eco-system. In addition, it will lead to an early benchmark/identification of promising novel nano-electronic technologies, based on the advanced concepts developed by Research Centers and Universities, and an identification of bottlenecks all along the innovation (value) chain.","PeriodicalId":441279,"journal":{"name":"2019 19th International Workshop on Junction Technology (IWJT)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"NEREID: NanoElectronics Roadmap for Europe: Identification and Dissemination\",\"authors\":\"E. Sangiorgi\",\"doi\":\"10.23919/IWJT.2019.8802903\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The NEREID project (“NanoElectronics Roadmap for Europe: Identification and Dissemination”) is dedicated to map the future of European Nanoelectronics. NEREID’s objective is to develop a medium- and long-term roadmap for the European nanoelectronics industry, starting from the needs of applications to address societal challenges and leveraging the strengths of the European eco-system. In addition, it will lead to an early benchmark/identification of promising novel nano-electronic technologies, based on the advanced concepts developed by Research Centers and Universities, and an identification of bottlenecks all along the innovation (value) chain.\",\"PeriodicalId\":441279,\"journal\":{\"name\":\"2019 19th International Workshop on Junction Technology (IWJT)\",\"volume\":\"49 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 19th International Workshop on Junction Technology (IWJT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/IWJT.2019.8802903\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 19th International Workshop on Junction Technology (IWJT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/IWJT.2019.8802903","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

NEREID项目(“欧洲纳米电子学路线图:识别和传播”)致力于绘制欧洲纳米电子学的未来。NEREID的目标是为欧洲纳米电子工业制定一个中期和长期的路线图,从解决社会挑战的应用需求开始,并利用欧洲生态系统的优势。此外,它将导致基于研究中心和大学开发的先进概念的有前途的新型纳米电子技术的早期基准/识别,并确定创新(价值)链上的瓶颈。
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NEREID: NanoElectronics Roadmap for Europe: Identification and Dissemination
The NEREID project (“NanoElectronics Roadmap for Europe: Identification and Dissemination”) is dedicated to map the future of European Nanoelectronics. NEREID’s objective is to develop a medium- and long-term roadmap for the European nanoelectronics industry, starting from the needs of applications to address societal challenges and leveraging the strengths of the European eco-system. In addition, it will lead to an early benchmark/identification of promising novel nano-electronic technologies, based on the advanced concepts developed by Research Centers and Universities, and an identification of bottlenecks all along the innovation (value) chain.
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