SOI场效应二极管存储单元的物理与设计

2012 IEEE International SOI Conference (SOI) Pub Date : 2012-10-01 DOI:10.1109/SOI.2012.6404395

D. Ioannou, Z. Chbili, A. Z. Badwan, Q. Li, Y. Yang, A. Salman

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引用次数: 4

摘要

描述了一种新的基于SOIFED的性能良好的记忆细胞家族，并解释了它们的工作原理。它们的工作依赖于通过适当地偏置栅极来局部改变SOI薄膜的导电性。它们易于制造，性能优良。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Physics and design of a SOI Field-Effect-Diode memory cell

A new family of well behaved memory cells based on the SOIFED has been described and their operation explained. Their operation relies on modifying the conductivity of the SOI film locally by suitably biasing the gates. They are easier to fabricate and their performance is excellent.

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2012 IEEE International SOI Conference (SOI)

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