采用全CMOS兼容工艺制备新型应变SiGe/TaOx/Ta RRAM器件

2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS) Pub Date : 2014-10-01 DOI:10.1109/NVMTS.2014.7060849

Y. Jiang, C. C. Tan, E. Yeo, M. Li, W. He, V. Y. Zhuo, Z. Fang, B. Weng

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摘要

一种新型应变SiGe/TaOx/Ta RRAM器件通过完全CMOS兼容工艺成功演示。底部电极(BE)由应变单晶SiGe层构成，其中n型和p型SiGe层均为BE。得到了这种RRAM器件的典型双极开关行为。本工作对循环均匀性进行了研究，发现n型SiGe作为BE具有更好的均匀性，这是由于SiGe层中砷比硼的掺杂分布更好。

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Novel strained SiGe/TaOx/Ta RRAM device fabricated by fully CMOS compatible process

A novel strained SiGe/TaOx/Ta RRAM device is successfully demonstrated via a fully CMOS compatible process. The bottom electrode (BE) is made of strained single crystalline SiGe layer where both n type and p type SiGe layer as the BE. Typical bipolar switching behavior is obtained for such RRAM devices. Cycle to cycle uniformity are investigated in this work, and it is found that n type SiGe as BE shows better uniformity due to the better dopant distribution for Arsenic than Boron in SiGe layer.

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2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS)

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