High yield optical integration compatible InP-based circuits

A set of digital circuits made with InP-based InGaAs/InAlAs heterostructure FETs (HFETs) is presented. The technology was designed to be integration-compatible with 1.3- mu m optical detectors. Integration levels ranged from 42 to 91 devices. For comparison, wafers were made with and without the optical detector epitaxial layers. High-speed performance with high yield has been achieved, showing that integration levels can be increased to realize more powerful optoelectronic circuit functions. Ring oscillator gate delays, with optical layers present, were as low as 61 ps at 16 mW/gate, and divide-by-2 operated to 1.6 GHz. Simulations show that optimized device sizing should significantly improve circuit performance. The high yield across four wafers indicates that complex OEICs are feasible.<>