液态氦温度下ingaas沟道异质结fet和GaAs-JFET低频噪声的表征

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791615

I. Hosako, K. Okumura, M. Akiba, N. Hiromoto

{"title":"液态氦温度下ingaas沟道异质结fet和GaAs-JFET低频噪声的表征","authors":"I. Hosako, K. Okumura, M. Akiba, N. Hiromoto","doi":"10.1109/COMMAD.1998.791615","DOIUrl":null,"url":null,"abstract":"This paper examines InGaAs-channel heterojunction-FETs (HJ-FETs) and GaAs-JFETs for their low-noise and low-power characteristics at 4.2 K. We demonstrated that Hooge's empirical relation applies to a FET with long gate.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"417 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Characterization of low frequency noise in InGaAs-channel heterojunction-FET's and GaAs-JFET's at liquid helium temperature\",\"authors\":\"I. Hosako, K. Okumura, M. Akiba, N. Hiromoto\",\"doi\":\"10.1109/COMMAD.1998.791615\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper examines InGaAs-channel heterojunction-FETs (HJ-FETs) and GaAs-JFETs for their low-noise and low-power characteristics at 4.2 K. We demonstrated that Hooge's empirical relation applies to a FET with long gate.\",\"PeriodicalId\":300064,\"journal\":{\"name\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"volume\":\"417 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-12-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.1998.791615\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791615","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文研究了ingaas沟道异质结fet (hj - fet)和gaas - jfet在4.2 K下的低噪声和低功耗特性。我们证明了Hooge的经验关系适用于长栅极场效应管。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Characterization of low frequency noise in InGaAs-channel heterojunction-FET's and GaAs-JFET's at liquid helium temperature

This paper examines InGaAs-channel heterojunction-FETs (HJ-FETs) and GaAs-JFETs for their low-noise and low-power characteristics at 4.2 K. We demonstrated that Hooge's empirical relation applies to a FET with long gate.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

自引率

0.00%

发文量

期刊最新文献

InGaP/GaAs resonant-tunneling transistor (RTT) Gallium arsenide technology for low-power, high performance processor cores Thick-film gas and humidity sensing array based on semiconducting metal oxides Compact modeling of high-frequency, small-dimension bipolar transistors Magneto-transport studies in AlGaN/GaN MODFETs