Sin-Yong Liang, Po-Hao Chiang, Zong-Yu Xie, Jenn-Ming Song, Shang-Kun Huang, Y. Chiu, D. Tarng, C. Hung
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引用次数: 0
摘要
cu - cu直接键合是三维芯片叠层的关键技术之一。本研究提出了通过控制键合表面残余应力来增强Cu-Cu直接键合的新思路。近红外辐射(NIR)引起的压缩残余应力增强了铜原子的扩散，从而促进了直接键合。在N2中，在250℃、10 MPa、5 min条件下进行热压键合，近红外暴露10秒后，两层Cu膜的连接强度可达28.9MPa。
Low temperature direct Cu bonding assisted by residual stress
Cu-to-Cu direct bonding is one of the key technologies for 3D (three-dimensional) chip stacking. This research proposes a new concept to enhance Cu-Cu direct bonding through the control of residual stresses on bonding surface. Compressive residual stress induced by near-infrared radiation (NIR) enhances the diffusion of copper atoms and thus direct bonding. Subjected to thermal compression bonding at 250°C for 5 min under 10 MPa in N2, joint strength of 28.9MPa between two Cu films exposed with NIR for 10 sec can be obtained.
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