{"title":"测量离子停止功率的测试结构","authors":"H. Kanata, Y. Tosaka, H. Ehara, S. Satoh","doi":"10.1109/ICMTS.1999.766240","DOIUrl":null,"url":null,"abstract":"The stopping powers of various ions in Si are essential for simulation of the soft errors of Si devices induced especially by secondary cosmic-ray neutrons. A new method has been developed for measuring ion stopping powers in Si that employs diodes fabricated on the SOI structure. This technique was applied to He/sup 2+/ ions, and the obtained stopping power was in good agreement with that obtained from the well known Ziegler formula.","PeriodicalId":273071,"journal":{"name":"ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)","volume":"229 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Test structure for measurement of ion stopping power\",\"authors\":\"H. Kanata, Y. Tosaka, H. Ehara, S. Satoh\",\"doi\":\"10.1109/ICMTS.1999.766240\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The stopping powers of various ions in Si are essential for simulation of the soft errors of Si devices induced especially by secondary cosmic-ray neutrons. A new method has been developed for measuring ion stopping powers in Si that employs diodes fabricated on the SOI structure. This technique was applied to He/sup 2+/ ions, and the obtained stopping power was in good agreement with that obtained from the well known Ziegler formula.\",\"PeriodicalId\":273071,\"journal\":{\"name\":\"ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)\",\"volume\":\"229 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.1999.766240\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1999.766240","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Test structure for measurement of ion stopping power
The stopping powers of various ions in Si are essential for simulation of the soft errors of Si devices induced especially by secondary cosmic-ray neutrons. A new method has been developed for measuring ion stopping powers in Si that employs diodes fabricated on the SOI structure. This technique was applied to He/sup 2+/ ions, and the obtained stopping power was in good agreement with that obtained from the well known Ziegler formula.
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