典型毫米波倒装封装中泄漏和串扰的抑制

G. Lee, Hai-Young Lee
{"title":"典型毫米波倒装封装中泄漏和串扰的抑制","authors":"G. Lee, Hai-Young Lee","doi":"10.1109/EPEP.1997.634069","DOIUrl":null,"url":null,"abstract":"Leakage phenomena of flip-chip structures on common GaAs and alumina main substrates are characterized using the spectral domain approach to reduce the possible chip-to-chip crosstalk and transmission resonance. We have found that the longitudinal section magnetic mode is dominant for the coplanar waveguide leakage and the leakage can be suppressed by properly managing the gap height and the main substrate thickness in addition to the dielectric constant.","PeriodicalId":220951,"journal":{"name":"Electrical Performance of Electronic Packaging","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Suppression of leakage and crosstalk in typical millimeter-wave flip-chip packages\",\"authors\":\"G. Lee, Hai-Young Lee\",\"doi\":\"10.1109/EPEP.1997.634069\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Leakage phenomena of flip-chip structures on common GaAs and alumina main substrates are characterized using the spectral domain approach to reduce the possible chip-to-chip crosstalk and transmission resonance. We have found that the longitudinal section magnetic mode is dominant for the coplanar waveguide leakage and the leakage can be suppressed by properly managing the gap height and the main substrate thickness in addition to the dielectric constant.\",\"PeriodicalId\":220951,\"journal\":{\"name\":\"Electrical Performance of Electronic Packaging\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electrical Performance of Electronic Packaging\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EPEP.1997.634069\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electrical Performance of Electronic Packaging","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPEP.1997.634069","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

为了减少芯片间串扰和传输共振的可能性,采用谱域方法对普通砷化镓和氧化铝基板上倒装芯片结构的泄漏现象进行了表征。我们发现纵截面磁模是共面波导泄漏的主导模式,通过适当控制缝隙高度和主衬底厚度以及介电常数可以抑制泄漏。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Suppression of leakage and crosstalk in typical millimeter-wave flip-chip packages
Leakage phenomena of flip-chip structures on common GaAs and alumina main substrates are characterized using the spectral domain approach to reduce the possible chip-to-chip crosstalk and transmission resonance. We have found that the longitudinal section magnetic mode is dominant for the coplanar waveguide leakage and the leakage can be suppressed by properly managing the gap height and the main substrate thickness in addition to the dielectric constant.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Low-cost technique for reducing the simultaneous switching noise in sub-board packaging configurations Time domain multiconductor transmission line analysis using effective internal impedance Ultra low loss millimeter wave MCM interconnects Survey of model reduction techniques for analysis of package and interconnect models of high-speed designs Delta-I noise avoidance methodology for high performance chip designs [CMOS microprocessors]
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1