{"title":"使用电气测试结构的x射线暴露掩模精度评估","authors":"Y. Kuroki, S. Hasegawa, T. Honda, Y. Iida","doi":"10.1109/ICMTS.1990.161725","DOIUrl":null,"url":null,"abstract":"An X-ray exposure mask was evaluated using electrical test structures. Linewidth was calculated from van der Pauw sheet resistivity and four-terminal bridge resistance. The four-terminal bridge gave a high resolution of 0.002 mu for 0.6- mu m patterns. It was confirmed that the electrical measurement has very high accuracy and reproducibility. A misalignment vector map was demonstrated by a pair o four-terminal bridges. The van der Pauw resistor was also applied for reducing batting error in electron-beam lithography.<<ETX>>","PeriodicalId":417292,"journal":{"name":"Proceedings of the 1991 International Conference on Microelectronic Test Structures","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"X-ray exposure mask accuracy evaluation using electrical test structures\",\"authors\":\"Y. Kuroki, S. Hasegawa, T. Honda, Y. Iida\",\"doi\":\"10.1109/ICMTS.1990.161725\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An X-ray exposure mask was evaluated using electrical test structures. Linewidth was calculated from van der Pauw sheet resistivity and four-terminal bridge resistance. The four-terminal bridge gave a high resolution of 0.002 mu for 0.6- mu m patterns. It was confirmed that the electrical measurement has very high accuracy and reproducibility. A misalignment vector map was demonstrated by a pair o four-terminal bridges. The van der Pauw resistor was also applied for reducing batting error in electron-beam lithography.<<ETX>>\",\"PeriodicalId\":417292,\"journal\":{\"name\":\"Proceedings of the 1991 International Conference on Microelectronic Test Structures\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-03-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 1991 International Conference on Microelectronic Test Structures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.1990.161725\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1991 International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1990.161725","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
X-ray exposure mask accuracy evaluation using electrical test structures
An X-ray exposure mask was evaluated using electrical test structures. Linewidth was calculated from van der Pauw sheet resistivity and four-terminal bridge resistance. The four-terminal bridge gave a high resolution of 0.002 mu for 0.6- mu m patterns. It was confirmed that the electrical measurement has very high accuracy and reproducibility. A misalignment vector map was demonstrated by a pair o four-terminal bridges. The van der Pauw resistor was also applied for reducing batting error in electron-beam lithography.<>
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