大批量生产中婴儿死亡率的特征

A. Vassighi, R. Kacprowicz, C. Carranza, W. Riordan
{"title":"大批量生产中婴儿死亡率的特征","authors":"A. Vassighi, R. Kacprowicz, C. Carranza, W. Riordan","doi":"10.1109/RELPHY.2008.4559004","DOIUrl":null,"url":null,"abstract":"Due to the large sample sizes required, certain reliability modeling parameters for infant mortality cannot be measured during technology development with desired confidence levels by engineering experiments. Among these reliability modeling parameters is thermal energy activation (Ea). Ea is used in the Arrhenius equation to calculate the burn-in time for integrated circuits. A small change in this parameter can have a great impact in burn-in time. In this work we have measured this parameter in high volume manufacturing (HVM) in 65 nm technology using naturally occurring data by applying novel new techniques at virtually no cost.","PeriodicalId":187696,"journal":{"name":"2008 IEEE International Reliability Physics Symposium","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Characterizing infant mortality in high volume manufacturing\",\"authors\":\"A. Vassighi, R. Kacprowicz, C. Carranza, W. Riordan\",\"doi\":\"10.1109/RELPHY.2008.4559004\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Due to the large sample sizes required, certain reliability modeling parameters for infant mortality cannot be measured during technology development with desired confidence levels by engineering experiments. Among these reliability modeling parameters is thermal energy activation (Ea). Ea is used in the Arrhenius equation to calculate the burn-in time for integrated circuits. A small change in this parameter can have a great impact in burn-in time. In this work we have measured this parameter in high volume manufacturing (HVM) in 65 nm technology using naturally occurring data by applying novel new techniques at virtually no cost.\",\"PeriodicalId\":187696,\"journal\":{\"name\":\"2008 IEEE International Reliability Physics Symposium\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-07-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.2008.4559004\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2008.4559004","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

由于所需的样本量较大,在技术开发过程中,无法通过工程实验以期望的置信度测量婴儿死亡率的某些可靠性建模参数。在这些可靠性建模参数中有热能激活(Ea)。在阿伦尼乌斯方程中使用Ea来计算集成电路的老化时间。该参数的微小变化会对老化时间产生很大的影响。在这项工作中,我们通过应用新颖的新技术,几乎没有成本地使用自然发生的数据,在65纳米技术的大批量生产(HVM)中测量了该参数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Characterizing infant mortality in high volume manufacturing
Due to the large sample sizes required, certain reliability modeling parameters for infant mortality cannot be measured during technology development with desired confidence levels by engineering experiments. Among these reliability modeling parameters is thermal energy activation (Ea). Ea is used in the Arrhenius equation to calculate the burn-in time for integrated circuits. A small change in this parameter can have a great impact in burn-in time. In this work we have measured this parameter in high volume manufacturing (HVM) in 65 nm technology using naturally occurring data by applying novel new techniques at virtually no cost.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Degradation effects in a-Si:H thin film transistors and their impact on circuit performance High-robust ESD protection structure with embedded SCR in high-voltage CMOS process New insight into tantalum pentoxide Metal-Insulator-Metal (MIM) capacitors: Leakage current modeling, self-heating, reliability assessment and industrial applications Electron energy loss spectrum application for failure mechanism investigation in semiconductor failure analysis Characterization of stress-voiding of Cu / Low-k vias attached to narrow lines
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1