氧化镓技术及应用

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI:10.1109/CSICS.2017.8240464

G. Jessen, K. Chabak, A. Green, N. Moser, J. McCandless, K. Leedy, A. Crespo, S. Tetlak

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引用次数: 7

摘要

在这项工作中，我们对β-Ga2O3的高临界电场强度提供的功率开关和射频应用的联合交易空间提供了早期的见解。通过在大块衬底上掺杂Sn、Si和Ge的β-Ga2O3薄膜的同外延生长形成了mosfet。几个关键的里程碑已经实现，如增强模式工作> 600 V，低欧姆接触电阻< 0.2 Ω·mm，以及GHz频段的射频功率增益。这些结果显示了射频放大器和开关技术的单片和混合集成的巨大前景。

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Gallium oxide technologies and applications

In this work, we provide early insight into the combined tradespace for both power switching and RF applications afforded by the high critical, electric-field strength of β-Ga2O3. MOSFETs formed by homoepitaxial growth of β-Ga2O3 films doped with Sn, Si, and Ge on bulk substrates have been characterized electrically. Several key milestones have been achieved such as enhancement-mode operation > 600 V, low ohmic contact resistance < 0.2 Ω·mm, and RF power gain in the GHz regime. These results show great promise for monolithic and hybrid integration of RF amplifiers and switch technologies.

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2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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