电路模拟器中GaN场效应管负载-拉力数据的比较研究

2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI:10.23919/EuMIC.2019.8909451

G. Avolio, A. Raffo, M. Marchetti, G. Bosi, V. Vadalà, G. Vannini

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引用次数: 7

摘要

我们比较了两种直接在电路模拟器中使用高频晶体管负载-拉力数据的方法。一种方法是基于人工神经网络(ANN)，另一种方法是基于查找表(LUT)。我们讨论了一些实际方面，包括在CAD环境中的实现和外推能力。

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GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study

We compared two approaches to use high-frequency transistor load-pull data directly into a circuit simulator. One approach is based on Artificial Neural Networks (ANN), the other on look-up tables (LUT). We discuss some practical aspects, including implementation in the CAD environment and extrapolation capability.

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2019 14th European Microwave Integrated Circuits Conference (EuMIC)

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