L. Zou, Z.G. Wang, D. Sun, T. Fan, X.F. Liu, J.W. Zhang
{"title":"砷在Si和Si/sub - 1-x/Ge/sub -x/涂层中的扩散比较","authors":"L. Zou, Z.G. Wang, D. Sun, T. Fan, X.F. Liu, J.W. Zhang","doi":"10.1109/SIM.1996.570941","DOIUrl":null,"url":null,"abstract":"Rapid thermal annealing of ion implanted arsenic in relaxed Si/sub 1-x/Ge/sub x/ (x=0.90/spl sim/0.43) epilayers was studied and compared to diffusion in Si. Sample analysis included depth profiling by secondary-ion-mass spectroscopy, and electrical characterization employing spreading resistance probe measurement. Arsenic chemical concentration profiles indicated that the behavior of implanted As in Si/sub 1-x/Ge/sub x/ after RTA was different from that in Si, and the Si/sub 1-x/Ge/sub x/ samples with the higher x exhibited box-shaped, concentration-dependent diffusion profiles. The maximum concentrations of electrically active arsenic in Si/sub 0.57/Ge/sub 0.43/ were found to be 3.0/spl times/10/sup 19/ and 4.2/spl times/10/sup 19/ cm/sup -3/ for 18 second anneals at 950/spl deg/C and 1050/spl deg/C, respectively, which is about one order of magnitude lower than the arsenic equilibrium solubility limit for arsenic-implanted Si.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"77 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Comparison of arsenic diffusion in Si and Si/sub 1-x/Ge/sub x/ epilayers\",\"authors\":\"L. Zou, Z.G. Wang, D. Sun, T. Fan, X.F. Liu, J.W. Zhang\",\"doi\":\"10.1109/SIM.1996.570941\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Rapid thermal annealing of ion implanted arsenic in relaxed Si/sub 1-x/Ge/sub x/ (x=0.90/spl sim/0.43) epilayers was studied and compared to diffusion in Si. Sample analysis included depth profiling by secondary-ion-mass spectroscopy, and electrical characterization employing spreading resistance probe measurement. Arsenic chemical concentration profiles indicated that the behavior of implanted As in Si/sub 1-x/Ge/sub x/ after RTA was different from that in Si, and the Si/sub 1-x/Ge/sub x/ samples with the higher x exhibited box-shaped, concentration-dependent diffusion profiles. The maximum concentrations of electrically active arsenic in Si/sub 0.57/Ge/sub 0.43/ were found to be 3.0/spl times/10/sup 19/ and 4.2/spl times/10/sup 19/ cm/sup -3/ for 18 second anneals at 950/spl deg/C and 1050/spl deg/C, respectively, which is about one order of magnitude lower than the arsenic equilibrium solubility limit for arsenic-implanted Si.\",\"PeriodicalId\":391894,\"journal\":{\"name\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"volume\":\"77 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1996.570941\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1996.570941","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Comparison of arsenic diffusion in Si and Si/sub 1-x/Ge/sub x/ epilayers
Rapid thermal annealing of ion implanted arsenic in relaxed Si/sub 1-x/Ge/sub x/ (x=0.90/spl sim/0.43) epilayers was studied and compared to diffusion in Si. Sample analysis included depth profiling by secondary-ion-mass spectroscopy, and electrical characterization employing spreading resistance probe measurement. Arsenic chemical concentration profiles indicated that the behavior of implanted As in Si/sub 1-x/Ge/sub x/ after RTA was different from that in Si, and the Si/sub 1-x/Ge/sub x/ samples with the higher x exhibited box-shaped, concentration-dependent diffusion profiles. The maximum concentrations of electrically active arsenic in Si/sub 0.57/Ge/sub 0.43/ were found to be 3.0/spl times/10/sup 19/ and 4.2/spl times/10/sup 19/ cm/sup -3/ for 18 second anneals at 950/spl deg/C and 1050/spl deg/C, respectively, which is about one order of magnitude lower than the arsenic equilibrium solubility limit for arsenic-implanted Si.
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