从基于电荷的大信号双极晶体管模型衍生出的多区域小信号模型

Proceedings of the 1988 Bipolar Circuits and Technology Meeting, Pub Date : 1988-09-12 DOI:10.1109/BIPOL.1988.51058

M. Jo, D. Burk

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引用次数: 3

摘要

多区域小信号模型源自基于电荷的大信号双极晶体管模型，该模型已升级为包括发射极拥挤、侧壁注入和其他多维效应。验证了该多区域模型，并演示了在(低到高)注入条件范围内对小信号晶体管模型进行参数提取的三区域分析的效果。

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A multi-regional small-signal model derived from the charge-based large-signal bipolar transistor model

A multiregional small-signal model is derived from a charge-based large-signal bipolar transistor model, which has been upgraded to include emitter crowding, sidewall injection, and other multidimensional effects. This multiregional model is verified and the effect of this three-region analysis of the parameter extraction for the small-signal transistor model over a range of (low to high) injection conditions is demonstrated.<>

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Proceedings of the 1988 Bipolar Circuits and Technology Meeting,

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