{"title":"砷化镓衬底上InSb薄膜的MBE生长和电学性能","authors":"Y. Zhang, P. P. Chen, T. Lin, H. Xia, T. X. Li","doi":"10.1117/12.888173","DOIUrl":null,"url":null,"abstract":"A series of InSb films with different thickness were grown by molecular beam epitaxy (MBE) on GaAs (001) substrates. The InSb films were characterized by the high-resolution x-ray diffraction (HRXRD), atomic force microscope (AFM) and Hall measurement. The measurements revealed that the films have good crystal quality and electrical properties. It was found that the crystal quality and the electrical properties degenerate with decrease of film thickness. And the room temperature magnetoresistance of the InSb films was also measured and discussed in detail.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"69 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"MBE growth and electrical properties of InSb film on GaAs substrate\",\"authors\":\"Y. Zhang, P. P. Chen, T. Lin, H. Xia, T. X. Li\",\"doi\":\"10.1117/12.888173\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A series of InSb films with different thickness were grown by molecular beam epitaxy (MBE) on GaAs (001) substrates. The InSb films were characterized by the high-resolution x-ray diffraction (HRXRD), atomic force microscope (AFM) and Hall measurement. The measurements revealed that the films have good crystal quality and electrical properties. It was found that the crystal quality and the electrical properties degenerate with decrease of film thickness. And the room temperature magnetoresistance of the InSb films was also measured and discussed in detail.\",\"PeriodicalId\":316559,\"journal\":{\"name\":\"International Conference on Thin Film Physics and Applications\",\"volume\":\"69 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-10-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Thin Film Physics and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.888173\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Thin Film Physics and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.888173","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
MBE growth and electrical properties of InSb film on GaAs substrate
A series of InSb films with different thickness were grown by molecular beam epitaxy (MBE) on GaAs (001) substrates. The InSb films were characterized by the high-resolution x-ray diffraction (HRXRD), atomic force microscope (AFM) and Hall measurement. The measurements revealed that the films have good crystal quality and electrical properties. It was found that the crystal quality and the electrical properties degenerate with decrease of film thickness. And the room temperature magnetoresistance of the InSb films was also measured and discussed in detail.
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