用于抑制边缘效应的改进FD somosfet的制造

2008 9th International Conference on Solid-State and Integrated-Circuit Technology Pub Date : 2008-12-30 DOI:10.1109/ICSICT.2008.4734514

Ning-Juan Wang, Ning Li, Zhong-li Liu, Fang Yu, Guohua Li

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引用次数: 1

摘要

带MESA的FD SOI mosfet和带LOCOS隔离的辐照FD SOI mosfet通常表现出边缘效应，即在亚阈值区域产生称为驼峰的泄漏电流。针对产生边缘效应的不同原因，采用圆角工艺和BTS结构来提高器件性能。结果表明，上述两种方法都能有效地减小边缘效应，并成功制备出合格的器件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Fabrication of improved FD SOIMOSFETs for suppressing edge effect

FD SOI MOSFETs with MESA and Irradiated FD SOI MOSFETs with LOCOS isolation usually show the edge effect, that is, the leakage current called hump is generated in the subthreshold region. According to different reasons for generating the edge effect, rounded corner process and BTS structure are applied to improve device performance. The results indicate that the above two methods are effective to reduce the edge effect and qualified devices are fabricated successfully.

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2008 9th International Conference on Solid-State and Integrated-Circuit Technology

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