{"title":"电阻对比成像在多级互连故障分析中的应用","authors":"E. I. Cole","doi":"10.1109/VMIC.1989.78020","DOIUrl":null,"url":null,"abstract":"Resistive contrast imaging (RCI) is a new failure analysis technique that uses a scanning electron microscope to generate a relative resistance map of an integrated circuit. The RCI map can be used to localize abrupt changes in resistance and verify continuity. Results using RCI on several two-level interconnection devices are described. The images demonstrate how RCI can be used to differentiate between levels and to localize metal shorts and opens. Methods for improving image quality and level differentiation as well as future development work are discussed.<<ETX>>","PeriodicalId":302853,"journal":{"name":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"Resistive contrast imaging applied to multilevel interconnection failure analysis\",\"authors\":\"E. I. Cole\",\"doi\":\"10.1109/VMIC.1989.78020\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Resistive contrast imaging (RCI) is a new failure analysis technique that uses a scanning electron microscope to generate a relative resistance map of an integrated circuit. The RCI map can be used to localize abrupt changes in resistance and verify continuity. Results using RCI on several two-level interconnection devices are described. The images demonstrate how RCI can be used to differentiate between levels and to localize metal shorts and opens. Methods for improving image quality and level differentiation as well as future development work are discussed.<<ETX>>\",\"PeriodicalId\":302853,\"journal\":{\"name\":\"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VMIC.1989.78020\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VMIC.1989.78020","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Resistive contrast imaging applied to multilevel interconnection failure analysis
Resistive contrast imaging (RCI) is a new failure analysis technique that uses a scanning electron microscope to generate a relative resistance map of an integrated circuit. The RCI map can be used to localize abrupt changes in resistance and verify continuity. Results using RCI on several two-level interconnection devices are described. The images demonstrate how RCI can be used to differentiate between levels and to localize metal shorts and opens. Methods for improving image quality and level differentiation as well as future development work are discussed.<>