一种改进的GaAs mesfet栅电容模型

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI:10.1109/GAAS.1996.567843

J. Kotz

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引用次数: 3

摘要

本文描述了自对准、LDD GaAs效应场效应管和dfet的栅极电容的测量和建模。提出了一种改进的、可扩展的栅极电容模型，适用于小型器件的仿真。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An improved gate capacitance model for GaAs MESFETs

This paper describes the measurement and modeling of gate capacitance for self-aligned, LDD GaAs EFETs and DFETs. An improved, scalable gate capacitance model is presented which is suitable for compact device simulation.

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GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996

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