Pucheng Liu, K. Kakushima, H. Iwai, A. Nakajima, T. Makino, M. Ogura, S. Nishizawa, H. Ohashi
{"title":"GaN/AlGaN异质界面上二维空穴气体的表征","authors":"Pucheng Liu, K. Kakushima, H. Iwai, A. Nakajima, T. Makino, M. Ogura, S. Nishizawa, H. Ohashi","doi":"10.1109/WIPDA.2013.6695585","DOIUrl":null,"url":null,"abstract":"Electrical properties of two-dimensional hole gas (2DHG) at GaN/Al0.23Ga0.77N heterointerface have been investigated. Existence of 2DHG at the interface is confirmed by capacitance-voltage and Hall Effect measurement. We have discussed transport mechanism of 2DHG by comparison with hole generated by conventional Mg impurity, based on experimental evaluations by X-ray diffraction, transmission electron microscope, atomic force microscope, secondary ion mass spectroscopy, and temperature dependence Hall Effect measurements.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Characterization of two-dimensional hole gas at GaN/AlGaN heterointerface\",\"authors\":\"Pucheng Liu, K. Kakushima, H. Iwai, A. Nakajima, T. Makino, M. Ogura, S. Nishizawa, H. Ohashi\",\"doi\":\"10.1109/WIPDA.2013.6695585\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electrical properties of two-dimensional hole gas (2DHG) at GaN/Al0.23Ga0.77N heterointerface have been investigated. Existence of 2DHG at the interface is confirmed by capacitance-voltage and Hall Effect measurement. We have discussed transport mechanism of 2DHG by comparison with hole generated by conventional Mg impurity, based on experimental evaluations by X-ray diffraction, transmission electron microscope, atomic force microscope, secondary ion mass spectroscopy, and temperature dependence Hall Effect measurements.\",\"PeriodicalId\":313351,\"journal\":{\"name\":\"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WIPDA.2013.6695585\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WIPDA.2013.6695585","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characterization of two-dimensional hole gas at GaN/AlGaN heterointerface
Electrical properties of two-dimensional hole gas (2DHG) at GaN/Al0.23Ga0.77N heterointerface have been investigated. Existence of 2DHG at the interface is confirmed by capacitance-voltage and Hall Effect measurement. We have discussed transport mechanism of 2DHG by comparison with hole generated by conventional Mg impurity, based on experimental evaluations by X-ray diffraction, transmission electron microscope, atomic force microscope, secondary ion mass spectroscopy, and temperature dependence Hall Effect measurements.
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