B. Laemmle, K. Schmalz, C. Scheytt, D. Kissinger, R. Weigel
{"title":"用于SiGe BiCMOS技术介质传感器读出的122ghz多探头反射计","authors":"B. Laemmle, K. Schmalz, C. Scheytt, D. Kissinger, R. Weigel","doi":"10.1109/CSICS.2011.6062487","DOIUrl":null,"url":null,"abstract":"In this publication a fully integrated multiprobe reflectometer at 122 GHz is presented. It can be used for readout of resonator-based dielectric sensors for measurement of chemical, biological, or medical liquids. The circuit consists of a voltage-controlled oscillator, an amplitude modulator, a capacitive tapped line, four power detectors, and a dummy sensor. The circuit is operated from a 3.75-V supply and has a power consumption of 319 mW. The readout principle of the circuit is demonstrated by comparing the S-parameters of the dummy sensor to measurements with a commercially available vector network analyzer. The circuit has been fabricated in a 190-GHz SiGe:C BiCMOS technology and occupies an area of 0.54 mm² .","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"203 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"A 122 GHz Multiprobe Reflectometer for Dielectric Sensor Readout in SiGe BiCMOS Technology\",\"authors\":\"B. Laemmle, K. Schmalz, C. Scheytt, D. Kissinger, R. Weigel\",\"doi\":\"10.1109/CSICS.2011.6062487\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this publication a fully integrated multiprobe reflectometer at 122 GHz is presented. It can be used for readout of resonator-based dielectric sensors for measurement of chemical, biological, or medical liquids. The circuit consists of a voltage-controlled oscillator, an amplitude modulator, a capacitive tapped line, four power detectors, and a dummy sensor. The circuit is operated from a 3.75-V supply and has a power consumption of 319 mW. The readout principle of the circuit is demonstrated by comparing the S-parameters of the dummy sensor to measurements with a commercially available vector network analyzer. The circuit has been fabricated in a 190-GHz SiGe:C BiCMOS technology and occupies an area of 0.54 mm² .\",\"PeriodicalId\":275064,\"journal\":{\"name\":\"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"203 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2011.6062487\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2011.6062487","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 122 GHz Multiprobe Reflectometer for Dielectric Sensor Readout in SiGe BiCMOS Technology
In this publication a fully integrated multiprobe reflectometer at 122 GHz is presented. It can be used for readout of resonator-based dielectric sensors for measurement of chemical, biological, or medical liquids. The circuit consists of a voltage-controlled oscillator, an amplitude modulator, a capacitive tapped line, four power detectors, and a dummy sensor. The circuit is operated from a 3.75-V supply and has a power consumption of 319 mW. The readout principle of the circuit is demonstrated by comparing the S-parameters of the dummy sensor to measurements with a commercially available vector network analyzer. The circuit has been fabricated in a 190-GHz SiGe:C BiCMOS technology and occupies an area of 0.54 mm² .