一种新的器件可靠性评估方法在超驱动电压电路中的应用

2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI:10.1109/RELPHY.2008.4559003

Tao Cheng, M.Z. Lee, M. Yang

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引用次数: 1

摘要

提出了一种新的电压过载下电路器件可靠性评估方法。通过本文给出的适当方法，3.3V CMOS氧化物的可靠性在某些电路应用中，即使在漏极侧超速时低于8V，也可以通过规范并具有良好的特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A new device reliability evaluation method for overdrive voltage circuit application

A new device reliability evaluation method is reported for the circuit application under voltage overdrive. Through an appropriate methodology shown in this paper, the 3.3V CMOS oxide reliability can be passed the specification and well characterized, even under 8V at drain side overdrive in some circuit application.

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2008 IEEE International Reliability Physics Symposium

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