Ge量子点肖特基二极管在89GHz整流天线中工作

Ulis 2011 Ultimate Integration on Silicon Pub Date : 2011-03-14 DOI:10.1109/ULIS.2011.5758017

A. Karmous, H. Xu, M. Oehme, E. Kasper, J. Schulze

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摘要

利用分子束外延技术(MBE)生长了具有Ge量子点的肖特基二极管结构。他们已经被用来制造埋设在金属半导体结下的锗点的NiSi肖特基二极管。这些二极管的截止频率高达1.1THz(从s参数测量到110GHz计算)。并给出了在毫米波功率检测系统(RECTENNA)中实现Ge QD肖特基二极管的初步结果。

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Ge quantum dot Schottky diode operated in a 89GHz Rectenna

Schottky diode structures with Ge quantum dots (QDs) have been grown by Molecular Beam Epitaxy (MBE). They have been employed to fabricate NiSi Schottky diodes with Ge dots buried below the metal-semiconductor junctions. These diodes have cut-off frequencies up to 1.1THz (calculated from S-parameter measurements up to 110GHz). Preliminary results demonstrating the implementation of Ge QD Schottky diode in a mm-wave power detection system (RECTENNA) are also presented.

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Ulis 2011 Ultimate Integration on Silicon

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