微波等离子体增强MOCVD生长GaN

R. Sani, M. Barmawi, P. Arifin, Sugianto
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引用次数: 0

摘要

采用微波等离子体增强MOCVD技术,在650℃左右的衬底温度下,成功地在SI-GaAs和SnO/sub /衬底上生长了GaN薄膜。这些温度大大低于使用传统MOCVD的GaN生长温度,后者超过1000/spl度/C。以三甲基镓和氮为前体。利用等离子体施加器产生氮气等离子体,通过石英管将氮气等离子体从腔体输送到基板加热器附近的地方。x射线衍射测量表明,生长层为六边形结构。采用Hall-van - der - Pauw技术测量电学性质。作为生长材料,室温电阻率、迁移率和载流子浓度分别为36 /spl ω //spl middot/cm、73 cm/sup 2//V/spl middot/s和4.6/spl times/10/sup 15/ cm/sup -3/。在不同的温度下,使用波长为325 nm的He-Cd激光进行光致发光测量。以2.9 eV为中心的发光清晰可见。紫外吸收光谱显示出3.4 eV左右的带隙。
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Growth of GaN by microwave plasma enhanced MOCVD
Thin films of GaN on SI-GaAs and SnO/sub 2/ substrates were successfully grown by Microwave Plasma enhanced MOCVD at substrate temperatures in the vicinity of 650/spl deg/C. These temperatures are substantially lower than the growth temperature of GaN using a conventional MOCVD, which is in excess of 1000/spl deg/C. Trimethylgallium and nitrogen were used as precursors. A plasma applicator was used to create the nitrogen plasma, which was delivered from the cavity to the place near the substrate hearer using a quartz tube. X-ray diffraction measurements were revealed that the grown layer is a hexagonal structure. A Hall-van der Pauw technique was employed to measure the electrical properties. As grown material, room temperature resistivity, mobility, and carrier concentration are 36 /spl Omega//spl middot/cm, 73 cm/sup 2//V/spl middot/s, and 4.6/spl times/10/sup 15/ cm/sup -3/ respectively. Photoluminescence measurements were performed using a He-Cd laser emitting at 325 nm at different the temperatures. Luminescence, centered at 2.9 eV were clearly observed. Meanwhile the UV absorption spectrum showed a band-gap of around 3.4 eV.
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