使用50GHz四端口测量的MOSFET模型提取

2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Pub Date : 2007-06-03 DOI:10.1109/RFIC.2007.380966

J. Brinkhoff, S. Rustagi, Jinglin Shi, F. Lin

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引用次数: 9

摘要

提出了一种精确有效的提取MOSFET等效电路模型的方法。四端口测量简化了重要元素的确定，如基板网络。这些测量也用于提取MOSFET的外来寄生元件。通过50 GHz的仿真和测量验证了模型提取的准确性。

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MOSFET Model Extraction Using 50GHz Four-Port Measurements

An accurate and efficient method to extract an equivalent circuit model of a MOSFET is presented. Four-port measurements simplify the determination of important elements, such as the substrate networks. These measurements are also used to extract the MOSFET extrinsic parasitic elements. The accuracy of the model extraction is verified by simulation and measurement to 50 GHz.

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2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium

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