{"title":"30 GHz CMOS低噪声放大器","authors":"E. Adabi, B. Heydari, M. Bohsali, A. Niknejad","doi":"10.1109/RFIC.2007.380961","DOIUrl":null,"url":null,"abstract":"30 GHz low noise amplifier was designed and fabricated in a 90 nm digital CMOS process. The mm-wave amplifier has a peak gain of 20 dB at 28.5 GHz and a 3 dB bandwidth of 2.6 GHz with the input and output matching better than 12 dB and 17 dB over the entire band respectively. The NF is 2.9 dB at 28 GHz and less than 4.2 dB across the band and it can deliver 2 dBm of power to a matched load at its 1 dB compression point. The amplifier has a measured linearity of IIIP3=-7.5 dBm. It consumes 16.25 mW of power using a low supply voltage of 1 V and occupies an area (excluding the pads) of 1600 mum x 420 mum.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"85 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"69","resultStr":"{\"title\":\"30 GHz CMOS Low Noise Amplifier\",\"authors\":\"E. Adabi, B. Heydari, M. Bohsali, A. Niknejad\",\"doi\":\"10.1109/RFIC.2007.380961\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"30 GHz low noise amplifier was designed and fabricated in a 90 nm digital CMOS process. The mm-wave amplifier has a peak gain of 20 dB at 28.5 GHz and a 3 dB bandwidth of 2.6 GHz with the input and output matching better than 12 dB and 17 dB over the entire band respectively. The NF is 2.9 dB at 28 GHz and less than 4.2 dB across the band and it can deliver 2 dBm of power to a matched load at its 1 dB compression point. The amplifier has a measured linearity of IIIP3=-7.5 dBm. It consumes 16.25 mW of power using a low supply voltage of 1 V and occupies an area (excluding the pads) of 1600 mum x 420 mum.\",\"PeriodicalId\":356468,\"journal\":{\"name\":\"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium\",\"volume\":\"85 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"69\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2007.380961\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2007.380961","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
30 GHz low noise amplifier was designed and fabricated in a 90 nm digital CMOS process. The mm-wave amplifier has a peak gain of 20 dB at 28.5 GHz and a 3 dB bandwidth of 2.6 GHz with the input and output matching better than 12 dB and 17 dB over the entire band respectively. The NF is 2.9 dB at 28 GHz and less than 4.2 dB across the band and it can deliver 2 dBm of power to a matched load at its 1 dB compression point. The amplifier has a measured linearity of IIIP3=-7.5 dBm. It consumes 16.25 mW of power using a low supply voltage of 1 V and occupies an area (excluding the pads) of 1600 mum x 420 mum.
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