{"title":"超平坦低功耗工艺不敏感的ku波段HEMT反馈MMIC","authors":"D. Helms, M.J. Fithian","doi":"10.1109/MCS.1992.185986","DOIUrl":null,"url":null,"abstract":"A three-stage Ku-band monolithic microwave integrated circuit (MMIC) amplifier using feedback design and 0.25- mu m-gate-length single-heterojunction high-electron-mobility-transistor (HEMT) devices has demonstrated improved process insensitivity with state-of-the-art gain flatness and power dissipation. The amplifier exhibited 0.25-dB flatness from 11.4 to 12.4 GHz using less than 150 mW to deliver 25-dB gain.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Ultra-flat low-power process insensitive Ku-band HEMT feedback MMIC\",\"authors\":\"D. Helms, M.J. Fithian\",\"doi\":\"10.1109/MCS.1992.185986\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A three-stage Ku-band monolithic microwave integrated circuit (MMIC) amplifier using feedback design and 0.25- mu m-gate-length single-heterojunction high-electron-mobility-transistor (HEMT) devices has demonstrated improved process insensitivity with state-of-the-art gain flatness and power dissipation. The amplifier exhibited 0.25-dB flatness from 11.4 to 12.4 GHz using less than 150 mW to deliver 25-dB gain.<<ETX>>\",\"PeriodicalId\":336288,\"journal\":{\"name\":\"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1992.185986\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1992.185986","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ultra-flat low-power process insensitive Ku-band HEMT feedback MMIC
A three-stage Ku-band monolithic microwave integrated circuit (MMIC) amplifier using feedback design and 0.25- mu m-gate-length single-heterojunction high-electron-mobility-transistor (HEMT) devices has demonstrated improved process insensitivity with state-of-the-art gain flatness and power dissipation. The amplifier exhibited 0.25-dB flatness from 11.4 to 12.4 GHz using less than 150 mW to deliver 25-dB gain.<>
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