POCl3氧化后退火还原SiO2/4H-SiC界面态

2015 International Semiconductor Conference (CAS) Pub Date : 2015-10-01 DOI:10.1109/SMICND.2015.7355225

R. Pascu, F. Craciunoiu, M. Kusko, M. Mihaila, G. Pristavu, M. Badila, G. Brezeanu

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引用次数: 5

摘要

采用电容-电压(C-V)表征方法研究了SiO2/4H-SiC界面的界面态密度(Dit)。采用了两种不同的测量方法(80-300K范围内不同温度下的C-V和高频(HF)与准静态(QS)特性)来测定Dit。与干燥氧化样品相比，在POCl3环境中氧化后退火(POA)后，Dit显著降低，几乎一个数量级。

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SiO2/4H-SiC interface states reduction by POCl3 post-oxidation annealing

Interface state density (D_it) at SiO₂/4H-SiC interfaces is investigated using capacitance-voltage (C-V) characterization. Two different measurement methods for D_it determination (both C-V at different temperatures in the range of 80-300K and high frequency (HF) vs quasi static (QS) characteristics) have been used. A significant reduction of D_it is observed, almost one order of magnitude, after a post oxidation annealing (POA) in POCl₃ ambient, compared to as-grown dry oxidized sample.

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2015 International Semiconductor Conference (CAS)

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