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引用次数: 0

摘要

氢和氦等离子体浸没离子注入(PIII)形成的微腔或气泡具有有趣的性质。例如,它们发出的光与多孔硅类似,但由于它们被埋在地下,光学性质不受传统多孔硅材料所遇到的表面条件的影响。这些气泡也为金属杂质形成了良好的内部捕集点,即使在高温下也很稳定。最后,利用这些微腔产生的机械应力来实现薄膜转移的离子切割/键合技术被用于制造绝缘体上硅(SOI)。
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Microcavity engineering using plasma immersion ion implantation
Microcavities or bubbles formed by hydrogen and helium plasma immersion ion implantation (PIII) possess intriguing properties. For example, they emit light similar to porous silicon, but because they are buried, the optical properties are not affected by surface conditions such as those encountered by conventional porous silicon materials. These bubbles also form excellent internal gettering sites for metallic impurities and are stable even at high temperature. Last but not least, the ion-cut/bonding technology utilizing the mechanical stress created by these microcavities to achieve thin film transfer is used to fabricate silicon-on-insulator (SOI).
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